2SC2073

Production specification NPN Triple Didduesd Planar Silicon Transistor 2SC2073 FEATURES z High Breakdown Voltage(VCBO≥900V). z Fast Switching Speed. z Wide ASO. Pb Lead-free TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 900 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Pulse Base Crrent Collector Dissipation Junction and Storage Temperature Ta=25℃ Tc=25℃ 800 V 7V 1.5 A 5 0.8 A 2 W 40 -55 to +150 ℃ X033 Rev.A www.gmicroelec.com 1 Production specification NPN Triple Didduesd Planar Silicon Transistor 2SC2073 ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base Breakdown Voltage V (BR) CBO IC=1mA,IE=0 900 V Collector-emitter Breakdown Voltage V (BR) CEO IC=5mA,IB=0 800 V Emitter-base Break...