VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Scho...
VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.52 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
VT1080S
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
123
VFT1080S
PIN 1
PIN 2
PIN 3
TO-262AA K
A NC
VBT1080S
NC K A HEATSINK
VIT1080S
3 2 1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A TJ max.
Package
10 A 80 V 100 A 0.60 V 150 °C TO-220AB, ITO-220AB, TO-263AB, TO-262AA
Diode variations
Single die
FEATURES
Trench MOS
Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For us...
