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VB30M120C-E3 Dataheets PDF



Part Number VB30M120C-E3
Manufacturers Vishay
Logo Vishay
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet VB30M120C-E3 DatasheetVB30M120C-E3 Datasheet (PDF)

VB30M120C-E3, VB30M120C-M3, VB30M120CHM3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TMBS ® TO-263AB K 2 1 VB30M120C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package 2 x 15 A 120 V 150 A 0.68 V 150 °C TO-263AB Diode variations Common cathode FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency.

  VB30M120C-E3   VB30M120C-E3


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