Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Description
VB20M120C-E3, VB20M120C-M3, VB20M120CHM3
www.vishay.com
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.55 V at IF = 5 A
TMBS ®
TO-263AB
K
2
1
VB20M120C
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM IFSM VF at IF = 10 A
120 V 120 A 0.64 V
TJ max.
150 °C
Package
TO...
