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V20150C-E3

Vishay

Dual High Voltage Trench MOS Barrier Schottky Rectifier

V20150C-E3, VF20150C-E3, VB20150C-E3, VI20150C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trenc...



V20150C-E3

Vishay


Octopart Stock #: O-1141406

Findchips Stock #: 1141406-F

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Description
V20150C-E3, VF20150C-E3, VB20150C-E3, VI20150C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20150C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VF20150C PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 1 VB20150C PIN 1 K PIN 2 HEATSINK 3 2 1 VI20150C PIN 1 PIN 2 PIN 3 K PRIMARY ...




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