VB10170C-E3, VB10170C-M3, VB10170CHM3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrie...
VB10170C-E3, VB10170C-M3, VB10170CHM3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.57 V at IF = 2.5 A
TMBS ®
TO-263AB
K
2 1
VB10170C
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. Package
2x5A 170 V 80 A 0.65 V 175 °C TO-263AB
Diode variations
Common cathode
FEATURES
Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3 Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/...