www.vishay.com
V40D120C-M3, V40D120CHM3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rec...
www.vishay.com
V40D120C-M3, V40D120CHM3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.45 V at IF = 5 A
TMBS ® eSMP® Series
TO-263AC (SMPD)
K
1
2 Top View
Bottom View
V40D120C
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
2 x 20 A
VRRM
120 V
IFSM VF at IF = 20 A (TA = 125 °C)
TJ max.
250 A 0.64 V 150 °C
Package
TO-263AC (SMPD)
Diode variations
Dual common cathode
FEATURES
Trench MOS
Schottky technology Very low profile - typical height of 1.7 mm Ideal for automated placement Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C AEC-Q101 qualified available:
- Automotive ordering code: base P/NHM3 Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling d...
