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V30M120M-E3 Dataheets PDF



Part Number V30M120M-E3
Manufacturers Vishay
Logo Vishay
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet V30M120M-E3 DatasheetV30M120M-E3 Datasheet (PDF)

www.vishay.com V30M120M-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A TMBS ® TO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 V30M120M PIN 1 PIN 3 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM .

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