Dual High Voltage Trench MOS Barrier Schottky Rectifier
Description
www.vishay.com
V20M120M-E3
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.58 V at IF = 5 A
TMBS ®
TO-220AB
FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Solder dip 275 °C max. 10 s, per JESD 22-B106 Material categorization: for ...
