V20DL45BP

www.vishay.com V20DL45BP Vishay General Semiconductor TMBS® (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.31 V at IF = 5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View FEATURES Trench MOS Schottky technology Very low profile - typical height of 1.7 mm Ideal for automated placement Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode 1 Anode 2 K Cathode DESIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 45 V IFSM 160 A VF at IF = 20 A (TA = 125 °C) TOP max. (AC model) 0.50 V 150 °C TJ max. (DC forward current) 200 °C Package SMPD (TO-263AC) Circuit configuration Single TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: as marked    MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum DC forward current (fig. 1) Peak forward surge curr...