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V20DL45-M3 Dataheets PDF



Part Number V20DL45-M3
Manufacturers Vishay
Logo Vishay
Description Low-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet V20DL45-M3 DatasheetV20DL45-M3 Datasheet (PDF)

www.vishay.com V20DL45-M3, V20DL45HM3 Vishay General Semiconductor Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.31 V at IF = 5 A TMBS® eSMP® Series TO-263AC (SMPD) K 1 2 Top View PIN 1 PIN 2 Bottom View K HEATSINK FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • A.

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www.vishay.com V20DL45-M3, V20DL45HM3 Vishay General Semiconductor Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.31 V at IF = 5 A TMBS® eSMP® Series TO-263AC (SMPD) K 1 2 Top View PIN 1 PIN 2 Bottom View K HEATSINK FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 45 V IFSM VF at IF = 20 A (TA = 125 °C) TJ max. 160 A 0.50 V 150 °C Package TO-263AC (SMPD) Diode variations Single die TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse batt.


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