RFN1LAM7S

Super Fast Recovery Diode RFN1LAM7S Datasheet lSeries Standard Fast Recovery lApplications General rectification lFeatures 1) Low forward voltage 2) Low switching loss lConstruction Silicon epitaxial planar type lDimensions (Unit : mm) 2.50±0.20 (1) 0.17± 0.10 0.05 lLand Size Figure (Unit : mm) 2.0 3.70±0.20 4.70±0.14 1.4 4.4 PMDTM (2) 1.50±0.20 0.95±0.10 ROHM : PMDTM JEDEC : SOD-128 : Manufacture Date lTaping Dimensions (Unit : mm) lStructure Cathode Anode lAbsolute Maximum Ratings (Tl= 25°C) Parameter Symbol Repetitive peak reverse voltage VRM Reverse voltage VR Average forward rectified current Io Non-repetitive forward surge current IFSM Junction temperature Tj Storage temperature Tstg lElectrical Characteristics (Tj= 25°C) Parameter Symbol Forward voltage Reverse current Reverse recovery time VF IR trr Thermal resistance Rth(j-l) Conditions Limits Unit Duty≦0.5 700 V Direct reverse voltage Glass epoxy board mounted, 60Hz half sin ...