DU2860T
RF Power MOSFET Transistor 60 W, 2 - 175 MHz, 28 V
Features
N-Channel enhancement mode device DMOS structur...
DU2860T
RF Power MOSFET
Transistor 60 W, 2 - 175 MHz, 28 V
Features
N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than bipolar devices RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature
VDS VGS IDS PD TJ
65 20 12 159 200
Storage Temperature Thermal Resistance
TSTG θJC
-65 to +150 1.1
Units V V A W °C °C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz) 30
ZIN (Ω) 9.0 - j4.0
ZLOAD (Ω) 6.0 +j0.0
50
10.0 - j6.5
5.0 + j2.0
100
6.0 - j5.5
4.0 + j3.0
200
1.1 - j3.0
2.0 + j1.9
VDD = 28V, IDQ = 300mA, POUT = 60 W
ZIN is the series equivalent input impedance of the device from gate to source.
ZLOAD is the optimum series equivalent load impedance as measured from drain to ground.
Package Outline
Rev. V1
LETTER DIM A B C D E F G H J K ...
