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DU2820S

Part Number	DU2820S
Manufacturer	MA-COM
Description	RF Power MOSFET Transistor
Published	Aug 21, 2017
Detailed Description	DU2820S RF Power MOSFET Transistor 200 W, 2 - 175 MHz, 28 V Features  N-Channel enhancement mode device  DMOS struct...
Datasheet	DU2820S PDF File

Overview

DU2820S RF Power MOSFET Transistor 200 W, 2 - 175 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  High saturated output power  Lower noise figure than bipolar devices  RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance VDS VGS IDS PD TJ TSTG θJC 65 20 24 62.
5 200 -55 to +150 2.
8 Units V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCE F (MHz) 30 ZIN (Ω) 17.
5 - j13.
0 ZLOAD (Ω) 16.
0 - j2.
5 50 15.
0 - j15.
5 15.
0 - j4.
0 100 8.
0 - j14.
0 12.
0 - j6.
0 200 ...

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