DU28200M

DU28200M RF Power MOSFET Transistor 200 W, 2 - 175 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  High saturated output power  Lower noise figure than bipolar devices  RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance VDS VGS IDS PD TJ TSTG θJC 65 20 20 389 200 -65 to +150 0.45 Units V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCE F (MHz) ZIN (Ω) ZLOAD (Ω) 30 2.7 - j4.8 7.2 - j1.9 100 1.6 - j3.0 5.25 - j1.4 150 1.5 - j2.0 5.0 - j0.7 175 1.6 - j1.0 5.2 - j0.6 200 1.8 - j0.5 5.5 - j0.5 VDD = 28V, IDQ = 1000mA, POUT = 200 W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. Package Outline LET...