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DU28120V

MA-COM
Part Number DU28120V
Manufacturer MA-COM
Description RF Power MOSFET Transistor
Published Aug 21, 2017
Detailed Description DU28120V RF Power MOSFET Transistor 120 W, 2 - 175 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structu...
Datasheet PDF File DU28120V PDF File

DU28120V
DU28120V

Overview
DU28120V RF Power MOSFET Transistor 120 W, 2 - 175 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  High saturated output power  Lower noise figure than bipolar devices  RoHS Compliant Package Outline Rev.
V1 ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Drain-Source Voltage VDS 65 Gate-Source Voltage Drain-Source Current VGS IDS 20 12 Power Dissipation PD 250 Junction Temperature Storage Temperature TJ TSTG 200 -55 to +150 Thermal Resistance θJC 0.
7 Units V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCE F (MHz) 30 ZIN (Ω) 3.
0 - j12.
5 ZLOAD (Ω) 8.
0 + j6.
0 50 1.
5 - j8.
5 7.
0 +j6.
5 100 1...


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