DU28120T
RF Power MOSFET Transistor 120 W, 2 - 175 MHz, 28 V
Features N-Channel enhancement mode device DMOS structu...
DU28120T
RF Power MOSFET
Transistor 120 W, 2 - 175 MHz, 28 V
Features N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than bipolar devices RoHS Compliant
Package Outline
Rev. V1
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance
VDS VGS IDS PD TJ TSTG θJC
65 20 24 269 200 -55 to +150 0.65
Units V V A W °C °C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz)
ZIN (Ω)
ZLOAD (Ω)
30
4.0 - j8.0
3.4 + j2.4
50
1.0 - j2.5
2.2 +j1.3
100
1.0 - j0.5
2.2 + j0.0
VDD = 28V, IDQ = 600mA, POUT = 120 W
ZIN is the series equivalent input impedance of the device from gate to source.
ZLOAD is the optimum series equivalent load impedance as measured from drain to ground.
LETTER DIM A B C D E F G H J K L M N
MILLIMETERS
MIN MAX...
