DU2810S

DU2810S RF Power MOSFET Transistor 10 W, 2 - 175 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  Common source configuration  Low noise floor  RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance VDS VGS IDS PD TJ TSTG θJC 65 20 2.8 35 200 -65 to +150 2 Units V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCE F (MHz) 30 ZIN (Ω) 20 - j11.0 ZLOAD (Ω) 23.0 + j3.0 50 24.0 - j15.0 19.0 +j5.0 100 18.0 - j18.0 14.0 + j6.0 200 12.0—j19.0 9.0 + j5.0 VDD = 28V, IDQ = 100mA, POUT = 10.0W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. Package Outline Rev. V1 LETTER DIM A B C D E F G H J K L MILLIMETERS MIN ...