HG Semiconductors The RF Line
2N6439HG RF POWER TRANSISTOR
ROHS Compliance,Silicon NPN POWER TRANSISTOR
. . . designed...
HG Semiconductors The RF Line
2N6439HG RF POWER
TRANSISTOR
ROHS Compliance,Silicon
NPN POWER
TRANSISTOR
. . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range.
ω Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225 to 400 MHz Band Minimum Gain = 7.8 dB @ 400 MHz
ω Built–In Matching Network for Broadband Operation Using Double Match Technique
ω 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
ω Gold Metallization System for High Reliability Applications
60 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER
TRANSISTOR NPN SILICON
CASE 316–01, STYLE 1
MAXIMUM RATINGS*
Rating
Symbol
Value
Unit
Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Total Device Dissipation @ TC = 255C (1)
Derate above 255C
VCEO VCBO VEBO
PD
33
60
4.0
146 0.83
Vdc
Vdc
Vdc
Watts W/5C
Storage Temperature Range THERMAL CHARACTERISTICS
Tstg...