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2SB834

GME
Part Number 2SB834
Manufacturer GME
Description PNP Epitaxial Silicon Transistor
Published Aug 21, 2017
Detailed Description PNP Epitaxial Silicon Transistor FEATURES z Low Collector-Emitter Saturation Voltage. VCE(sat)=1V(Max)@IC=3A,IB=0.3A. z...
Datasheet PDF File 2SB834 PDF File

2SB834
2SB834

Overview
PNP Epitaxial Silicon Transistor FEATURES z Low Collector-Emitter Saturation Voltage.
VCE(sat)=1V(Max)@IC=3A,IB=0.
3A.
z DC Current Gain HFE=60-200@IC=0.
5A.
z Complememtary to PNP 2SD880.
Pb Lead-free Production specification 2SB834 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Continuous Peak Collector Dissipation Junction and Storage Temperature -60 -7 -3 -6 -0.
5 1.
5 -55 to +150 V V A A W ℃ X031 Rev.
A www.
gmicroelec.
com 1 Production specification PNP Epitaxial Sil...


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