2SB834

PNP Epitaxial Silicon Transistor FEATURES z Low Collector-Emitter Saturation Voltage. VCE(sat)=1V(Max)@IC=3A,IB=0.3A. z DC Current Gain HFE=60-200@IC=0.5A. z Complememtary to PNP 2SD880. Pb Lead-free Production specification 2SB834 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Continuous Peak Collector Dissipation Junction and Storage Temperature -60 -7 -3 -6 -0.5 1.5 -55 to +150 V V A A W ℃ X031 Rev.A www.gmicroelec.com 1 Production specification PNP Epitaxial Silicon Transistor 2SB834 ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Test conditions MIN MAX UNIT Collector-base Breakdown Voltage V(BR)CBO IC=-1mA,IE=0 -60 V Collector-emitter Breakdown Voltage V(BR)CEO IC=-50mA,IB=0 -60 V...