2SA1129

DATA SHEET SILICON POWER TRANSISTOR 2SA1129 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SA1129 is a mold power transistor developed for mid-speed switching, and is ideal for use as a ramp driver. FEATURES Large current capacity with small package: IC(DC) = −7.0 A Low collector saturation voltage: VCE(sat) = −0.3 V MAX. @IC = −3.0 A, IB = −0.1 A Complementary transistor: 2SC2654 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg Conditions PW ≤ 300 µs, duty cycle ≤ 10% TC = 25°C TA = 25°C Ratings −30 −30 −7.0 −7.0 −15 Unit V V V A A −3.5 40 1.5 150 −55 to +150 A W W °C °C ORDERING INFORMATION Part No. 2SA1129 Package TO...