Document
MJE200 - NPN, MJE210 - PNP
Preferred Device
Complementary Silicon Power Plastic Transistors
These devices are Ădesigned for low voltage, low-power, high-gain
audio amplifier applications.
Features
•ăCollector-Emitter Sustaining Voltage -
VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
•ăHigh DC Current Gain -
hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2.0 Adc = 10 (Min) @ IC = 5.0 Adc
•ăLow Collector-Emitter Saturation Voltage -
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc
•ăHigh Current-Gain - Bandwidth Product -
fT = 65 MHz (Min) @ IC = 100 mAdc
•ăAnnular Construction for Low Leakage -
ICBO = 100 nAdc @ Rated VCB
•ăPb-Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous - Peak
VCEO 40 Vdc
VCB 25 Vdc
VEB 8.0 Vdc
IC 5.0 Adc 10
Base Current Total Power Dissipation @ TC = 25_C
Derate above 25_C
IB PD
1.0 Adc
15 W 0.12.