MJE200

MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, high-gain audio amplifier applications. Features ăCollector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc ăHigh DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2.0 Adc = 10 (Min) @ IC = 5.0 Adc ăLow Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc ăHigh Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc ăAnnular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB ăPb-Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous - Peak VCEO 40 Vdc VCB 25 Vdc VEB 8.0 Vdc IC 5.0 Adc 10 Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C IB PD 1.0 Adc 15 W 0.12...