JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
BD233/235/237 TRANSISTOR (NPN...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate
Transistors
BD233/235/237
TRANSISTOR (
NPN)
FEATURES Complement to BD234/236/238 respectively
TO-126
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
VCEO
VEBO IC PC PC RΘJA
Collector-Base Voltage Collector-Emitter Voltage
BD233 BD235 BD237
BD233 BD235 BD237
Emitter-Base Voltage
Collector Current –Continuous
Collector Dissipation
Collector Dissipation (Tc=25℃ )
Thermal Resistance from Junction to Ambient
45 60 100 45 60 80 5
2
1.25
25
100
V
V
V A W W ℃/W
RΘJC TJ Tstg
Thermal Resistance from Junction to Case
Junction Temperature Storage Temperature
5 150
-55~+150
℃/W ℃ ℃
1. EMITTER 2. COLLECTOR 3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage Collector cut-off current
Emitter cut-off current DC current gain Co...
