2SD2583
®
2SD2583
Pb
Pb Free Plating Product
NPN Silicon Epitaxial Power Transistor
FEATURES Low VCE(sat)
VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) High DC Current Gain
hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A)
ABSOLUTE MAXIMUM RATINGS
Maximum Voltage and Current (TA = 25 °C)
Collector to Base Voltage
VCB0
30 V
Collector to Emitter Volte...
