2SC3358

Production specification Silicon Epitaxial Planar Transistor FEATURES z Low noise and high gain. NF=1.1dB TYP.,Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz z High power gain. MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz. Pb Lead-free 2SC3358 APPLICATIONS z Designed for low noise amplifier at VHF,UHF and CATV band. SOT-363 ORDERING INFORMATION Type No. Marking 2SC3358 R23/R24/R25 Package Code SOT-363 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 20 VCEO Collector-Emitter Voltage 12 VEBO Emitter-Base Voltage 3 IC Collector Current -Continuous 100 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -65 to +150 Units V V V mA mW ℃ C142 Rev.A www.gmicroelec.com 1 Production specification Silicon Epitaxial Planar Transistor 2SC3358 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)...