2SB776

2SB776 PNP Epitaxial Planar Transistors 2SD886 NPN Epitaxial Planar Transistors P b Lead(Pb)-Free 2SB776 2SD886 TO-126 1.EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Cevice Disspation Ta=25°C Junction Temperature Storage Temperture Symbol VCEO VCBO VEBO IC PD TJ Tstg PNP/2SB776 NPN/2SD886 -50 50 -50 50 -5.0 5.0 -3.0 3.0 1.0 +150 -55 to +150 Unit V V V A W °C Device Marking 2SB776=B776 , 2SD886=D886 ELECTORICAL CHARACTERISTICS Characteristics Collect-Emitter Breakdown Voltage (IC=-5/5 mA, IB=0) Collect-Base Breakdown Voltage (IC=-100/100 µA, IE=0) Emitter-Base Breakdown Voltage (IE=-100/100 µA, IC=0) Collector Cutoff Current (VCB=-50/50 V, IE=0) Emitter Cutoff Current (VEB=-3.0/3.0Vdc, IC=0) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min -50/50 Max - -50/50 - -5.0/5.0 - - -1.0/1.0 - -1.0/1.0 Unit V V V µA µA WEITRON http://www.weitron.com....