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2SC1383 Dataheets PDF



Part Number 2SC1383
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC1383 Datasheet2SC1383 Datasheet (PDF)

isc Silicon NPN Transistor INCHANGE Semiconductor 2SC1383 DESCRIPTION ·Low Collector Saturation Voltage ·Complement to Type 2SA683 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplification and driver amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 .

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isc Silicon NPN Transistor INCHANGE Semiconductor 2SC1383 DESCRIPTION ·Low Collector Saturation Voltage ·Complement to Type 2SA683 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplification and driver amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1.5 A 1 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Transistor INCHANGE Semiconductor 2SC1383 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 2m A ; IB= 0 25 V V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 30 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 0.4 V VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 0.5A; IB= 50mA VCB= 20V; IE= 0 1.2 V 0.1 μA hFE-1 DC Current Gain IC= 0.5A ; VCE= 10V 85 340 hFE-2 DC Current Gain IC= 1A ; VCE= 5V 50 fT Current-Gain—Bandwidth Product IE= -50mA;VCB= 10V,f= 200MHz 200 MHz COB Output Capacitance IE= 0 ; VCB= 10V;f= 1MHz 11 pF  hFE-1 Classifications Q R S 85-170 120-240 170-340 isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Transistor isc Product Specification 2SC1383 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.cn 3 sc & iscsemi is registered trademark .


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