2SB985

PNP General Purpose Transistors P b Lead(Pb)-Free 2SB985 1 2 3 1.EMITTER 3.BASE 2.COLLECTOR TO-92MOD MAXIMUM RATINGS(Ta=25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation TA=25°C Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Value -50 -60 -6.0 -3.0 0.9 150 -55 to 150 Unit V V V mA mW °C °C WEITRON http://www.weitron.com.tw 1/5 19-Feb-09 2SB985 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test conditions V(BR)CBO IC=-10μA, IE=0 V(BR)CEO IC=-1mA, IB=0 V(BR)EBO IE=-10μA, IC=0 ICBO VCB=-40V, IE=0 IEBO VEB=-4V, IC=0 hFE(1) VCE=-2V, IC...