2SA683 / 2SA684 PNP Silicon Epitaxial Planar Transistor
for low frequency power amplification and driver amplification
...
2SA683 / 2SA684
PNP Silicon Epitaxial Planar
Transistor
for low frequency power amplification and driver amplification
The
transistor is subdivided into three group, Q, R and S according to its DC current gain.
On special request, these
transistors can be manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage
2SA683 2SA684
2SA683 2SA684
Collector Current
Peak Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package Weight approx. 0.19g
Symbol
-VCBO
-VCEO -VEBO
-IC -IP Ptot Tj TS
Value 30 50 25 40 5
1
1.5
1
150
- 55 to + 150
Unit
V
V V A A W OC OC
Characteristics at Tamb = 25 OC
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at -VCE = 10 V, -IC = 500 mA Current Gain Group Q hFE
85
- 170 -
R hFE
120
-
240 -
S hFE
170
-
340 -
at -VCE = 5 V, -IC = 1 A
hFE 50
-
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Co...
