NPN Silicon Epitaxial Planar Transistor
FEATURES
z Excellent HFE Linearity. z High DC current gain. z High Power Dissip...
NPN Silicon Epitaxial Planar
Transistor
FEATURES
z Excellent HFE Linearity. z High DC current gain. z High Power Dissipation.
APPLICATIONS
z Audio output driver amplifier. z General purpose switch.
Pb
Lead-free
ORDERING INFORMATION
Type No.
Marking
M28S
28S
Production specification
M28S
SOT-23 Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
40
VCEO
Collector-Emitter Voltage
20
VEBO
Emitter-Base Voltage
6
IC Collector Current -Continuous
1
IB Base current
0.4
PC Collector Power Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units V V V A A mW ℃
C058 Rev.A
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Production specification
NPN Silicon Epitaxial Planar
Transistor
M28S
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0
40
V
Collector-emitter breakdown...
