JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
ZTX458 TRANSISTOR (NPN)
FEATUR...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate
Transistors
ZTX458
TRANSISTOR (
NPN)
FEATURES z General Purpose Amplifier
Transistor z High Breakdown Voltage
TO – 92
1.EMITTER 2.BASE 3.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO VCEO VEBO
IC PC RΘJA Tj Tstg
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
400 400
5 300
1 125 150 -55~+150
V V V mA W ℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage
V(BR)CBO V(BR)CEO* V(BR)EBO
IC=100μA, IE=0 IC=10mA, IB=0 IE=100μA, IC=0
400 400
5
V V V
Collector cut-off current
ICBO
VCB=320V, IE=0
0.1 μA
Collector cut-off ...
