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KTC3192

JCET

NPN Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTC3192 TRANSISTOR(NPN) TO-92...


JCET

KTC3192

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Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTC3192 TRANSISTOR(NPN) TO-92 FEATURE High Power Gain: Gpe=29dB(Typ)(f=10.7MHZ) MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4V IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 1.EMITTER 2. COLLECTOR 3. BASE ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Collector-base time constant Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE...




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