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KTC3203

JCET

NPN Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTC3203 TRANSISTOR (NPN) TO-9...


JCET

KTC3203

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTC3203 TRANSISTOR (NPN) TO-92 FEATURES z Complementary to KTA1271 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 35 30 5 800 625 150 -55-150 Unit V V V mA mW ℃ ℃ 1. EMITTER 2. COLLECTOR 3. BASE ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Collector-base breakdown voltage V(BR)CBO IC = 0.1mA, IB=0 35 Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 Emitter-base breakdown voltage V(BR)EBO IE= 0.1mA, IC=0 5 Collector cut-off current ICBO VCB= 35V , IE=0 0.1 Collector cut-off current ICEO VCE= 25V , IB=0 0.2 Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 DC curr...




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