Document
BC637, BC639, BC639-16
High Current Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Collector - Emitter Voltage
Symbol
BC637 BC639
VCEO
Value 60 80
Unit Vdc
Collector - Base Voltage
BC637 BC639
VCBO
60 80
Vdc
Emitter - Base Voltage
Collector Current − Continuous
Total Device Dissipation Derate above 25°C
@
TA
=
25°C
VEBO IC PD
5.0 Vdc 1.0 Adc 625 mW 5.0 mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD 800 mW 12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended O.