BC636-16

BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage BC636 BC638 BC640 Collector-Base Voltage BC636 BC638 BC640 Emitter-Base Voltage Collector Current — Continuous www.DataSheet4U.com Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Symbol RθJA RθJC Value –45 –60 –80 –45 –60 –80 –5.0 –0.5 Unit Vdc Vdc Vdc Adc 625 mW 5.0 mW/°C 1.5 12 –55 to +150 Watts mW/°C °C Max Unit 200 °C/W 83.3 °C/W http://onsemi.com COLLECTOR 2 3 BASE 1 EMITTER 1 23 CASE 29 TO–92 STYLE 14 ORDERING INFORMATION Device Package Shipping BC636 TO–92 5000 Units/Box BC636ZL1 TO–92 2000/Ammo Pack BC636–16ZL1 TO–92 ...