L8550QLT1

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE Pb-Free Package is available. ORDERING INFORMATION Device Package L8550*LT1 SOT-23 L8550*LT1G (Pb-Free) SOT-23 Shipping 3000/Tape&Reel 3000/Tape&Reel MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base voltage Emitter-base Voltage Collector current-continuoun THERMALCHARACTERISTICS V CEO V CBO V EBO IC 25 V 40 V 5V 800 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board (1) T A = 25 °C Derate above 25 °C PD 225 mW 1.8 mW /°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25 °C Derate above 25 °C R θJA 556 °C/W PD 300 mW 2.4 mW /°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICEMARKING R θJA 417 °C/W T J , T stg -55 to +150 °C L8550QLT1 = 1YD L8550PLT1=85P ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted) Characteristic Symb...