ST 2SC458
NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications.
The transistor is subdivided int...
ST 2SC458
NPN Silicon Epitaxial Planar
Transistor Low frequency amplifier applications.
The
transistor is subdivided into three group, B, C and D according to its DC current gain.
On special request, these
transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta=25 ? )
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC IE Ptot Tj TS
G S P FORM A IS AVAILABLE
Value 30 30 5 100 -100 200 150
-55 to +150
Unit V V V mA mA
mW OC OC
РАДИОТЕХ
Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта:
[email protected] Веб: www.rct.ru
®
ST 2SC458
Characteristics at Tamb=25 OC
Symbol
Min.
DC Current Gain at VCE=12V, IC=2mA
Current Gain Group
B C D
Collector Cutoff Current at VCB=18V
Emitter Cutoff Current at VEB=2V
Collector Emitter Saturation Vo...
