2SC3279(NPN)
TO-92 Bipolar Transistors
1. EMITTER 2. COLLECTOR 3. BASE
TO-92
Features
High DC current gain and excell...
2SC3279(
NPN)
TO-92 Bipolar
Transistors
1. EMITTER 2. COLLECTOR 3. BASE
TO-92
Features
High DC current gain and excellent hFE linearity Low saturation voltage
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
30 V
VCEO
Collector-Emitter Voltage
10
V
VEBO
Emitter-Base Voltage
6V
IC Collector Current –Continuous 2
A
PC Collector Power Dissipation
750
mW
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
Symbol Test conditions
V(BR)CBO IC=1mA , IE=0
V(BR)CEO IC=10mA, IB=0
V(BR)EBO IE=1mA, IC=0
IC...
