2SC2310
NPN Silicon Epitaxial Planar Transistor
low frequency, low noise amplifier.
The transistor is subdivided into t...
2SC2310
NPN Silicon Epitaxial Planar
Transistor
low frequency, low noise amplifier.
The
transistor is subdivided into two groups B and C according to its DC current gain.
On special request, these
transistors can be manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain at VCE = 12 V, IC = 2 mA Group
Current Gain
Collector Base Cutoff Current at VCB = 18 V
Emitter Base Cutoff Current at VEB = 2 V
Collector Base Breakdown Voltage at IC = 10 µA
Collector Emitter Breakdown Voltage at IC = 1 mA
Emitter Base Breakdown Voltage at IC = 10 µA
Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA
Base Emitter Voltage at IC = 2 mA, VCE = 12 V
Transition Frequency at VCE = 12 V, IC = 2 mA
Collector Output Capacitance at VC...