2SC2001 NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivide...
2SC2001
NPN Silicon Epitaxial Planar
Transistor
for switching and AF amplifier applications.
The
transistor is subdivided into three groups, O, Y and G, according to its DC current gain.
On special request, these
transistors can be manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 oC)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package Weight approx. 0.19g
Symbol VCBO VCEO VEBO IC Ptot Tj TS
Value 30 25 5 700 600 150
-55 to +150
Unit V V V mA
mW OC OC
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7/15/2011
Characteristics at Tamb=25 oC
Parameter DC Current Gain
at VCE=1V, IC=100mA Current Gain Group O Y G
at VCE=1V, IC=700mA Collector Base Breakdown Voltage
at IC=10μA Base Emitter Voltage
at IC=10mA, VCE=6V Emitter Cutoff Current
at VEB=5V Collector Cutoff Current
at VCB=30V Collector Saturation Voltage
at IC=700mA, IB...
