2SC2001

ST 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25 oC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS G S P FORM A IS AVAILABLE Value 30 25 5 700 600 150 -55 to +150 Unit V V V mA mW OC OC РАДИОТЕХ Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: [email protected] Веб: www.rct.ru ® ST 2SC2001 Characteristics at Tamb=25 oC DC Current Gain at VCE=1V, IC=100mA Current Gain Group O Y G at VCE=1V, IC=700mA Collector Base Breakdown Voltage at IC=10µA Base Emitter Voltage at IC=10mA, VCE=6V Emitter Cutoff Current at...