JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
2SA933AS TRANSISTOR (PN...
JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate
Transistors
2SA933AS
TRANSISTOR (
PNP)
FEATURES ·Excellent hFE Linearity
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO
Collector-Base Voltage
-60 V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current
-150 mA
PC
Collector Power dissipation 300
mW
TJ Junction Temperature Tstg Storage Temperature
150 ℃
-55~+150
℃
TO-92S
1. EMITTER 2. COLLECTOR 3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage
V(BR)CBO V(BR)CEO V(BR)EBO
IC=-50μA,IE=0
IC=-1mA,IB=0 IE=-50μA,IC=0
Collector cut-off current
ICBO
VCB=-60V, IE=0
Emitter cut-off current
IEBO VEB= -6V, IC=0
DC current gain
hFE VCE=-6 V, IC= -1mA
Collector-emitter saturation voltage Transition f...
