Production specification
NPN SWITCHING TRANSISTOR
FEATURES
z Epitaxial planar die construction. z Complementary PNP ty...
Production specification
NPN SWITCHING
TRANSISTOR
FEATURES
z Epitaxial planar die construction. z Complementary
PNP type available
(MMBT2907AT). z Collector Current Capability Ic=600mA. z Ultra-small surface mount package.
Pb
Lead-free
MMBT2222AT
APPLICATIONS
z General switching and amplification.
ORDERING INFORMATION
Type No.
Marking
MMBT2222AT
1P
SOT-523
Package Code SOT-523
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER
MMBT3904T
VCBO
collector-base voltage
75
VCEO
collector-emitter voltage
40
VEBO
emitter-base voltage
6
IC collector current (DC)
600
Pd Power dissipation
150
RθJA
Thermal resistance, junction to Ambient
833
Tstg storage temperature range
-55 to +150
Tj junction temperature
150
UNIT V V V mA mW °C/W °C °C
H020 Rev.A
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Production specification
NPN SWITCHING
TRANSISTOR
MMBT2222AT
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. ...