Production specification
Power Transistor
FEATURES
z High VCEO,VCEO=80V. z High IC,IC=1A(DC). z Good HFE Linearity. z L...
Production specification
Power
Transistor
FEATURES
z High VCEO,VCEO=80V. z High IC,IC=1A(DC). z Good HFE Linearity. z Low VCE(sat). z Complement the 2SB1260.
Pb
Lead-free
KTD1898
APPLICATIONS
z
NPN silicon
transistor.
ORDERING INFORMATION
Type No.
Marking
KTD1898
DF
SOT-89
Package Code SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
100 V
VCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current -Continuous
1A
IC Collector Current -pulse
PC Collector Dissipation
Tj,Tstg
Junction and Storage Temperature
Note1:Mounted on ceramic substrate(250mm2*0.8t)
2
0.5 1
-55 to +150
A
W W
℃
E153 Rev.A
www.gmicroelec.com 1
Production specification
Power
Transistor
KTD1898
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0
80
V
Collector cu...
