KTD1624

NPN Silicon Epitaxial Planar Transistor FEATURES Pb  Adoption of MBIT processes. Lead-free  Low collector-to-emitter saturation voltage.  Fast switching speed.  Large current capacity and wide ASO.  Complementary: KTB1124. Production specification KTD1624 ORDERING INFORMATION Type No. Marking KTD1624 YA/YB/YC SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 50 VEBO Emitter-Base Voltage 6 IC Collector Current -Continuous 3 ICP Collector Current –Continuous(Pulse) 6 PC Collector Dissipation 500 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V A A mW ℃ E014 Rev.A www.gmicroelec.com 1 Production specification NPN Silicon Epitaxial Planar Transistor KTD1624 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Collector cut-off current Emitter cut-off current Symbol ICBO IEBO...