KTB1124

PNP Silicon Epitaxial Planar Transistor FEATURES Pb  Adoption of MBIT processes. Lead-free  Low collector-to-emitter saturation voltage.  Fast switching speed.  Complementary: KTD1624. Production specification KTB1124 ORDERING INFORMATION Type No. Marking KTB1124 XA/XB/XC SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC ICP PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current –Continuous(Pulse) Collector Dissipation Junction and Storage Temperature -60 -50 -6 -3 -6 1 -55 to +150 Units V V V A A W ℃ E107 Rev.A www.gmicroelec.com 1 Production specification PNP Silicon Epitaxial Planar Transistor KTB1124 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX Collector cut-off current Emitter cut-off current ICBO IEBO VCB=-40V,IE=0 VEB=-4V,I...