Production specification
PNP Silicon Epitaxial Planar Transistor
FEATURES
Pb
z High speed switching time.
Lead-free...
Production specification
PNP Silicon Epitaxial Planar
Transistor
FEATURES
Pb
z High speed switching time.
Lead-free
z Low saturation voltage:VCE(sat)=-0.5V(Max)
z PC=1~2W(Mounted on ceramic substrate)
z Small flat package.
z Complementary: KTC4379.
KTA1666
APPLICATIONS
z Power amplifier application. z Power switching application.
ORDERING INFORMATION
Type No.
Marking
KTA1666
WO/WY
SOT-89
Package Code SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO VCEO VEBO IC IB PC Tj Tstg
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Base Current Collector Dissipation Junction Temperature Storage Temperature Range
-50 -50 -5 -2 -0.4 500 150 -55 to +150
Units V V V A A mW ℃ ℃
E001 Rev.A
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Production specification
PNP Silicon Epitaxial Planar
Transistor
KTA1666
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditio...