KTA1663

PNP Silicon Epitaxial Planar Transistor FEATURES z 1W(Mounted on Ceramic Substrate). z Small flat package. z Complementary: KTC4375. Pb Lead-free Production specification KTA1663 ORDERING INFORMATION Type No. Marking KTA1663 HO/HY SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC IB PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Base Current Collector Dissipation Junction and Storage Temperature -30 -30 -5 -1.5 -0.3 500 -55 to +150 Units V V V A A mW ℃ E092 Rev.A www.gmicroelec.com 1 Production specification PNP Silicon Epitaxial Planar Transistor KTA1663 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage V(BR)CBO V(BR)CEO V(BR)EBO IC=-1mA,IE=0 IC=-10mA,IB=0 IE=-1mA,...